d) none of the mentioned Trapatt diode 1. Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. The semiconductor diode is a widely used electronics component found in many electronic circuit designs today. Sanfoundry Global Education & Learning Series – Microwave Engineering. Participate in the Sanfoundry Certification contest to get free Certificate of Merit. Join our social networks below and stay updated with latest contests, videos, internships and jobs! However, TRAPATT diode has a number of advantages and also a number of applications. • In conventional system, there are two letters at the start, first one indicates semiconductor material (A = germanium, B = Silicon) and the second letter indicates applications of diode (A= signal diode, Y = Rectifier diode, Z = Zener diode). The figure below depicts the structure of an ordinary diode and its symbol. a) 10-11 seconds Explanation: Inside a coaxial resonator, the TRAPATT diode is normally … c) Four b) average voltage It is due to the differences in the energy gap band structure of semiconductor materials and so different number of photons is emitted with varying frequencies. View Answer, 11. If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is: c) Low gain ... Rate effect in four layer diodes. The substrate 1 and the semiconductor layers 2, 3, 4 are chosen analogously to embodiment 1 with regard to the layer thickness and layer composition. Classical p-n junction diode cannot be used for high frequency applications because of: b) Decreases Theory & Design of Ferrimagnetic Components, here is complete set of 1000+ Multiple Choice Questions and Answers, Prev - Microwave Engineering Questions and Answers – IMPATT and BARITT Diodes, Next - Microwave Engineering Questions and Answers – Heterojunction BJT – 1, VLSI Questions and Answers – Built-in Self Test, Microwave Engineering Questions and Answers – Heterojunction BJT – 1, Optical Communications Questions and Answers, Manufacturing Engineering / Processes I Questions and Answers, Instrumentation Transducers Questions and Answers, Electronics & Communication Engineering Questions and Answers, Electrical Engineering Questions and Answers, Electrical & Electronics Engineering Questions and Answers, Master of Computer Applications Questions and Answers, Bachelor of Computer Applications Questions and Answers, Basic Electrical Engineering Questions and Answers, Engineering Physics II Questions and Answers, Electronic Devices and Circuits Questions and Answers, Microwave Engineering Questions and Answers, Microwave Engineering Questions and Answers – Crystal Oscillators. If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is: The rapid increase in terminal current with applied voltage (above 30 V) is caused by thermionic hole injection into the semiconductor as the depletion layer of the reverse-biased contact reaches through the entire device thickness. With the ability to operate at frequencies between about 3 and 100 GHz or more, one of the main advantages of this microwave diode is the relatively high power capability of the IMPATT diode. d) None of the mentioned

This state of diode is known as forward biased state. © 2011-2020 Sanfoundry. Join our social networks below and stay updated with latest contests, videos, internships and jobs! a) True The tunnel diode is a negative resistance semiconductor p-n junction diode because of the tunnel effect of electrons in the p-n junction. The ordinary signal diodes have a junction formed by p type semiconductor and n type semiconductor, the lead joining p-type is called the anode and the other side lead joining the n-type is called the cathode.. TRAPATT diode is normally mounted at a point inside a coaxial resonator where there is minimum RF voltage swing. The IMPATT diode or IMPact Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. What is claimed is 1. View Answer. The depletion layer barrier at the junction is very thin 100 ̇ A or 10-6 cm. b) 2×10-11 seconds View Answer, 11. a) Vd/2l View Answer, 8. When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in: d) 24 GHz They operate at frequencies of about 3 and 100 GHz, or higher. In between these layers, a p type layer and an intrinsic region is sandwiched. c) high reverse saturation current An apparent 3π/2 transit angle of the injected carrier that traverses the semiconductor depletion region. View Answer, 7. View Answer, 4. A major disadvantage of TRAPATT diode is: c) Remains unchanged View Answer, 5. a) 3.2 V c) Sensitive receiver c) 30 GHz At this time we are unable to process approval. c) Operating frequency a) High bias voltage d) 15.2 % View Answer, 7. If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is: Participate in the Sanfoundry Certification contest to get free Certificate of Merit. a) two IMPATT diodes employ impact ionization technique which is a noisy mechanism of generating charge carriers. a) Two The material used to fabricate IMPATT diodes is GaAs since they have the highest efficiency in all aspects. © 2011-2021 Sanfoundry. Semiconductor, any of a class of crystalline solids intermediate in electrical conductivity between a conductor and an insulator.Semiconductors are employed in the manufacture of various kinds of electronic devices, including diodes, transistors, and integrated circuits.Such devices have found wide application because of their compactness, reliability, power efficiency, and low cost. View Answer, 10. For a typical Read diode the n-layer may be only 1 to 2 µm thick, and the intrinsic layer may be between 2 and 20µm thick. d) 6.5 V b) 6.4 V b) 25 GHz Multiple Choice Questions and Answers on Semiconductor Diode Multiple Choice Questions and Answers By Sasmita January 9, 2020 In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: The most important functional unit of a spectrum analyzer is: b) IF amplifier a) avalanche multiplication a) average current b) Oscilloscope c) Vd/2πl As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode: d) average resistance In a high-frequency oscillator of the type comprising a semiconductor junction diode, means for reverse biasing the diode to avalanche breakdown, means for defining a semiconductor current transit region, said diode being located in an oscillator circuit resonant at a frequency related to the transit time of the transit region, the improvement wherein: c) 2.4 V A PN junction photodiode is made of two layers namely p-type and n-type semiconductor whereas PIN photodiode is made of three layers namely p-type, n-type and intrinsic semiconductor. b) three a) True 1. introduction The TRAPATT (Tra pped P lasma A valanche T riggered T ransit) diode is another microwave energy which is used as both amplifier and oscillator. Advantage of Schottky diode over silicon crystal diode is the presence minority charge carriers. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. b) False Theory & Design of Ferrimagnetic Components, here is complete set of 1000+ Multiple Choice Questions and Answers, Prev - Microwave Engineering Questions and Answers – GUNN Diodes, Next - Microwave Engineering Questions and Answers – Applications of RF Diodes, VLSI Questions and Answers – Scan Design Techniques-2, VLSI Questions and Answers – Built-in Self Test, Waste Water Engineering Questions and Answers, Engineering Drawing Questions and Answers, Engineering Chemistry I Questions and Answers, Engineering Chemistry II Questions and Answers, Chemical Engineering Questions and Answers, Engineering Physics I Questions and Answers, Best Reference Books – Technology, Engineering and Sciences, Analog Communications Questions and Answers, Fluidization Engineering Questions and Answers, Basic Electrical Engineering Questions and Answers, Linear Integrated Circuits Questions and Answers, Engineering Physics II Questions and Answers, Electronic Devices and Circuits Questions and Answers, Microwave Engineering Questions and Answers. b) Vd/l c) Frequency sensitive All Rights Reserved. b) Size A microwave generator which operates between hundreds of MHz … a) Fabrication is costly Current is injected through a top ohmic contact. b) Silicon crystal diode In order to achieve high current density, a compromise in _______is made in a TRAPATT diode. 1.

This page covers advantages and disadvantages of Diode. The number of semiconductor layers in IMPATT diode is: The Tunnel diodes are heavily doped p-n junction and its impurity concentrations of 1019 to 1020 atoms/cm3 are used. To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. View Answer, 3. A four layer semiconductor diode whose characteristic at the first quadrant is similar to that of a silicon-controlled rectifier (SCR). Principles of Operation :- A … In accordance with the invention, diode 14 is typically a Trapatt diode; that is, a diode capable of sustaining Trapatt mode oscillations. This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Applications of RF Diodes”. TRAPATT DIODE Derived from the Trapped Plasma Avalanche … One layer is doped with P-type material and the other layer with N-type material. A metal-semiconductor junction formed between a metal and n-type semiconductor creates a barrier or depletion layer known as a schottky barrier. The electric field in the entire space charge region is the largest at N + P. View Answer, 4. It consists of two layers of semiconductors. c) GaAs diode • In american system, code starts with 1N followed by serial number of the diode. b) Low operational bandwidth Schottky barrier diode is a sophisticated version of the point contact ______________ d) High forward biased current

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Spectrum analyzer d ) average bias voltage d ) average resistance View Answer, 10 characteristic at the is... Impatt diodes is GaAs since they have negative resistance and are used oscillators! Semiconductor to increase the minority carrier current increase the minority carrier current system, code starts 1N. And an intrinsic region is the largest at N + P. What claimed... Structure of an ordinary diode and its symbol used electronics component found many... With a doping profile that allows electron tunneling through a narrow energy band gap quadrant is similar to that a! Region be completely filled to cause the punch through to occur all aspects opti… 2.1 diode... On their working principles and characteristics practice all areas of Microwave Engineering order to achieve high current,., 2 a frequency domain representation of a signal, displaying the average power density versus frequency IMPact! 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